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| PC353T PC353T s Features 1. With base terminal 2. Applicable to infrared ray reflow ( 230C, MAX. 30 seconds ) 3. High isolation voltage ( Viso : 3 750V rms ) 4. Recognized by UL (No. E64380) 5. Mini-flat package Mini-flat Package Photocoupler with Base Terminal s Outline Dimensions 1.27 0.25 6 5 4 ( Unit : mm ) Internal connection diagram 6 5 4 353 4.4 0.2 1 1 Anode 3 Cathode 5.3 0.3 C0.4 ( Input side ) 3 4 Emitter 5 Collector 6 Base 0.2 0.05 1 3 0.4 0.1 s Applications 1. Hybrid substrates that reguire high denity mounting 2. Programmable controllers 3.6 0.3 2.6 0.2 s Package Specifications Model No. PC353T Taping specifications Taping reel diameter 178mm ( 750pcs. ) 0.1 0.1 0.5 + 0.4 - 0.2 7.0 + 0.2 - 0.7 6 s Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector-base voltage Emitter-base voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Symbol IF I FM VR P V CEO V ECO V CBO V EBO IC PC P tot V iso T opr T stg T sol ( Ta = 25C ) Rating 50 1 6 70 80 6 80 6 50 150 170 3.75 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V V V mA mW mW kV rms C C C Input Output Soldering area *1 Pulse width <=100 s, Duty ratio : 0.001 *2 AC for 1 min., 40 to 60% RH, f = 60H z *3 For 10 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " 0.2mm or more PC353T s Electro-optical Characteristics Parameter Forward voltage Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Response time Rise time Fall time Symbol VF IR Ct ICEO BV CEO BV ECO BV CBO IC V CE(sat) R ISO Cf tr tf Conditions IF = 20mA VR = 4V V = 0, f = 1kHz VCE = 20V, I F = 0 IC = 0.1mA IF = 0 IE = 10 A IF = 0 IC = 0.1mA IF = 0 IF = 5mA VCE = 5V IF = 20mA IC = 1mA DC500V 40 to 60% RH V = 0, f = 1MH Z VCE = 2V, I C = 2mA RL = 100 MIN. 80 6 80 2.5 5 x 1010 TYP. 1.2 30 0.1 1011 0.6 4 3 ( Ta = 25C ) MAX. 1.4 10 250 100 30 0.2 1.0 18 18 Unit V A pF nA V V V mA V pF s s Input Output Transfer characteristics Fig. 1 Forward Current vs. Ambient Temperature 50 Fig. 2 Diode Power Dissipation vs. Ambient Temperature 100 Diode power dissipation P ( mW ) Forward current I F ( mA ) 40 80 70 60 30 20 40 10 0 - 30 20 0 - 30 0 25 55 75 100 0 25 55 75 100 Ambient temperature T a ( C ) Ambient temperature T a ( C ) PC353T Fig. 3 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc ( mW ) Fig. 4 Total Power Dissipation vs. Ambient Temperature Total power dissipation P tot ( mW ) 200 200 170 150 150 100 100 50 50 0 - 30 0 25 50 75 100 0 - 30 0 25 50 75 100 Ambient temperature T a ( C ) Ambient temperature T a ( C ) Fig. 5 Peak Forward Current vs. Duty Ratio 10000 Peak forward current I FM ( mA ) Pulse width <= 100 s T a = 25C Fig. 6 Forward Current vs. Forward Voltage 500 200 T a = 75C Forward current I F ( mA ) 100 50 20 10 5 2 50C 25C 0C - 25C 1000 100 10 10 -3 10 - 2 Duty ratio 10 -1 1 1 0 0.5 1.0 1.5 2.0 F 2.5 3.0 Forward voltage V ( V) Fig. 7 Current Transfer Ratio vs. Forward Current 400 Current transfer ratio CTR ( % ) Fig. 8 Collector Current vs. Collector-emitter Voltage 50 Collector current I C ( mA ) I F = 30mA I F = 20mA I F = 10mA 30 40 200 20 I F = 5mA R BE = R BE = 500k R BE = 100k 0 0 0.5 1.0 5.0 10 Forward current I F ( mA ) 50 100 10 I F = 1mA 0 0 5 Collector-emitter voltage V CE ( V ) 10 PC353T Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature 150 I F = 5mA V CE = 5V Relative current transfer ratio ( % ) Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 I F = 20mA I C = 1mA 100 50 Collector-emitter saturation voltage VCE ( SAT ) ( V ) 0 - 30 0 20 40 60 80 100 0 - 30 Ambient temperature T a ( C ) 0 20 40 60 80 Ambient temperature T a ( C ) 100 Fig.11 Collector Dark Current vs. Ambient Temperature 10 -5 Fig.12 Response Time vs. Load Resistance 500 V CE = 2A I C = 2mA T a = 25C 5 V CE = 20V 200 100 Response Time ( s ) 50 20 10 5 2 1 0.5 Collector dark current I CEO ( A ) 10 -6 5 10 -7 5 tf tr td ts 10 -8 5 10 -9 5 10 - 10 5 10 - 11 - 30 0 20 40 60 a 80 ( C ) 100 0.2 0.1 0.01 0.1 1 Load resistance R L ( k ) 10 Ambient temperature T Fig.13 Collector-emitter Saturation Voltage vs. Forward Current 4.8 Collector-emitter saturation voltage V CE ( sat ) ( V ) T a = 25C I C = 0.5mA 1mA 3mA 5mA 7mA 3.6 2.4 1.2 0 0 3 6 9 F 12 ( mA ) 15 Foward current I q Please refer to the chapter "Precautions for Use." |
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